symbol v ds v gs i dm i ar e ar e as dv/dt t j , t stg t l symbol maximum r ja 55 r cs 0.5 r jc 2.8 mj p d derate above 25 o c power dissipation b t c =25c a avalanche current c 1.0 repetitive avalanche energy c a mj single pulsed avalanche energy h 30 pulsed drain current c junction and storage temperature range absolute maximum ratings t a =25c unless otherwise noted continuous drain current b units parameter t c =25c t c =100c v v drain-source voltage 600 i d gate-source voltage 0.8 c/w thermal characteristics units c/w maximum junction-to-ambient a,g maximum case-to-sink a maximum junction-to-case d,f parameter - 2.3 c/w peak diode recovery dv/dt 5 v/ns maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c w w/ o c c typical 45 maximium 30 4.0 -50 to 150 1.3 45 0.36 15 aod1n60 / AOU1N60 1.3a, 600v n-channel mosfet formerl y en g ineerin g p art number aod960 0 g d s g t o-252 d-pak t op vie w s bottom view d g s features v ds (v) = 600v i d = 1.3a r ds(on) < 9 ? (v gs = 10v) 100% uis tested! 100% r g tested! c iss , c oss , c rss tested! general description the aod1n60 has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. t o-251 g g s s d d d t op vie w bottom view alpha & omega semiconductor, ltd. www.aosmd.com
aod1n60 / AOU1N60 symbol min typ max units bv dss 600 v bv dss / ? t j 0.6 v/ o c 1 10 i gss 100 na v gs(th) 3 4.1 5 v r ds(on) 7.5 9 ? g fs 0.9 s v sd 0.65 1 v i s 1a i sm 4a c iss 105 130 160 pf c oss 12 14.5 17.5 pf c rss 1.5 1.8 2.2 pf r g 2.9 3.5 5.3 ? q g 6.1 8 nc q gs 1.3 2 nc q gd 3.1 4 nc t d(on) 10 13 ns t r 6.7 13 ns t d(off) 20 26 ns t f 11.5 23 ns t rr 114 137 ns q rr 0.63 0.76 c this product has been designed and qualified for the consumer mark e -50 to 175 components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =1.3a,di/dt=100a/ s,v ds =100v maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =1a, r g =25 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =480v, i d =1a gate source charge gate drain charge static drain-source on-resistance forward transconductance diode forward voltage i s =1a, v gs =0v v ds =40v, i d =0.65a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage i d =250a, v gs =0v v gs =10v, i d =0.65a reverse transfer capacitance i f =1.3a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i dss a maximum body-diode pulsed current v ds =480v, t j =125c breakdown voltage temperature coefficient i d =250a, v gs =0v gate threshold voltage v ds =v gs , i d =250 a v ds =600v, v gs =0v v ds =0v, v gs =30v zero gate voltage drain current gate-body leakage current a : the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to220 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =150c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i as =1a, v dd =150v, r g =10 ? , starting t j =25c rev0: may 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod1n60 / AOU1N60 typical electrical and thermal characteristic s -50 to 175 0.1 1 10 246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c 7 8 9 10 11 12 13 14 0 0.5 1 1.5 2 2.5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =0.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) 25c 125c v ds =40v v gs =10v 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v alpha & omega semiconductor, ltd. www.aosmd.com
aod1n60 / AOU1N60 typical electrical and thermal characteristic s -50 to 175 0 3 6 9 12 15 02468 q g (nc) figure 7: gate-charge characteristics v gs (volts) 1 10 100 1000 0 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction- to-case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =480 i d =1a single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =2.8c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 0.0 0.1 1.0 10.0 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 alpha & omega semiconductor, ltd. www.aosmd.com
aod1n60 / AOU1N60 -50 to 175 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-case (note g) power (w) t j(max) =175c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z jc normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =55c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
aod1n60 / AOU1N60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms tt r d(on) t on t d(off ) t f t of f vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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